器件名称: FDN302P
功能描述: P-Channel 2.5V Specified PowerTrench MOSFET
文件大小: 103.44KB 共5页
简 介:FDN302P
October 2000
FDN302P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).
Features
–20 V, –2.4 A. RDS(ON) = 0.055 @ VGS = –4.5 V RDS(ON) = 0.080 @ VGS = –2.5 V
Fast switching speed High performance trench technology for extremely low RDS(ON) SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint
Applications
Power management Load switch Battery protection
D
D
S
G S
SuperSOT -3
TM
G
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Maximum Power Dissipation
Parameter
Ratings –20
±12
(Note 1a)
Units
V V A W °C
–2.4 –10
0.5 0.46
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
–55 to +150
250 75
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
°C/W °C/W
Package Marking and Ordering Information
Device Marking 302 Device FDN302P Reel Size 7’’ Tape width 8mm Quantity 3000 units
2000 Fairchild Semiconductor Corporation
FDN302P Rev C(W)
FDN302P
Electrical Characteristics
Symbol
BVDSS BVDSS ===TJ IDSS IGSSF IGSSR
TA = 25°C unless otherwise noted
Par……