器件名称: FDN308P
功能描述: P-Channel 2.5V Specified PowerTrench MOSFET
文件大小: 96.53KB 共5页
简 介:FDN308P
February 2001
FDN308P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).
Features
–20 V, –1.5 A. RDS(ON) = 125 m @ VGS = –4.5 V RDS(ON) = 190 m @ VGS = –2.5 V
Fast switching speed High performance trench technology for extremely low RDS(ON) SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint
Applications
Power management Load switch Battery protection
D
D
S
G S
SuperSOT -3
TM
G
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
Parameter
Ratings
–20 ±12
(Note 1a)
Units
V V A W °C
–1.5 –10 0.5 0.46 –55 to +150
Maximum Power Dissipation PD TJ, TSTG
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
250 75
°C/W °C/W
Package Marking and Ordering Information
Device Marking 308 Device FDN308P Reel Size 7’’ Tape width 8mm Quantity 3000 units
2001 Fairchild Semiconductor Corporation
FDN308P Rev B(W)
FDN308P
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR
TA = 25°C unless otherwise noted
Parame……
