器件名称: FDN335N
功能描述: N-Channel 2.5V Specified PowerTrenchTM MOSFET
文件大小: 210.05KB 共8页
简 介:FDN335N
April 1999
FDN335N
N-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features
1.7 A, 20 V. RDS(ON) = 0.07 @ VGS = 4.5 V RDS(ON) = 0.100 @ VGS = 2.5 V. Low gate charge (3.5nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability.
Applications DC/DC converter Load switch
D
D
S
SuperSOT -3
TM
G
TA = 25°C unless otherwise noted
G
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
Parameter
Ratings
20
(Note 1a)
Units
V V A W °C
±8 1.7 8 0.5 0.46 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
250 75
°C/W °C/W
Package Outlines and Ordering Information
Device Marking
335
1999 Fairchild Semiconductor Corporation
Device
FDN335N
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
FDN335N Rev. C
FDN335N
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR
TA = 25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage ……