器件名称: FDN336P_05
功能描述: Single P-Channel 2.5V Specified PowerTrench MOSFET
文件大小: 77.87KB 共5页
简 介:FDN336P
January 2005
FDN336P
Single P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits and DC/DC conversion.
Features
–1.3 A, –20 V. RDS(ON) = 0.20 @ VGS = –4.5 V RDS(ON) = 0.27 @ VGS = –2.5 V Low gate charge (3.6 nC typical) High performance trench technology for extremely low RDS(ON) SuperSOT
TM
-3 provides low RDS(ON) and 30%
higher power handling capability than SOT23 in the same footprint
D
D
S
G S
SuperSOT -3
TM
G
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Maximum Power Dissipation
Parameter
Ratings
–20 ±8
(Note 1a)
Units
V V A W °C
–1.3 –10 0.5 0.46 –55 to +150
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
250 75
°C/W °C/W
Package Marking and Ordering Information
Device Marking 336 Device FDN336P Reel Size 7’’ Tape width 8mm Quantity 3000 units
2005 Fairchild Semiconductor Corporation……
