器件名称: FDN339AN
功能描述: N-Channel 2.5V Specified PowerTrench MOSFET
文件大小: 259.99KB 共8页
简 介:FDN339AN
November 1999
FDN339AN
N-Channel 2.5V Specified PowerTrench MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features
3 A, 20 V. RDS(ON) = 0.035 @ VGS = 4.5 V RDS(ON) = 0.050 @ VGS = 2.5 V.
Low gate charge (7nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability.
Applications DC/DC converter Load switch
D
D
S
SuperSOT -3
TM
G
TA = 25°C unless otherwise noted
G
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, T stg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
Parameter
Ratings
20 ±8
(Note 1a)
Units
V V A W °C
3 20 0.5 0.46 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
250 75
°C/W °C/W
Package Outlines and Ordering Information
Device Marking
339
Device
FDN339AN
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
1999 Fairchild Semiconductor Corporation
FDN339AN Rev. C
FDN339AN
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR
TA = 25°C unless otherwise noted
Parameter
Drain-Source Breakdown Vo……
