器件名称: FDS6576
功能描述: P-Channel 2.5V Specified PowerTrenchTM MOSFET
文件大小: 607.53KB 共8页
简 介:FDS6576
November 1999 PRELIMINARY
FDS6576
P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
This P-Channel 2.5V specified MOSFET is in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).
Features
-11 A, -20 V. RDS(ON) = 0.014 @ VGS = -4.5 V RDS(ON) = 0.020 @ VGS = -2.5 V
Extended VGSS range (±12V) for battery applications. Low gate charge (44nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.
Applications Load switch Battery protection Power management
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FDS6576 Rev. B
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