器件名称: AS5LC1008DCJ-10/IT
功能描述: 128K x 8 SRAM High-Speed CMOS SRAM with 3.3V Revolutionary Pinout
文件大小: 121.79KB 共10页
简 介:SRAM
Austin Semiconductor, Inc. 128K x 8 SRAM
High-Speed CMOS SRAM with 3.3V Revolutionary Pinout
FEATURES
High-speed access times of 10, 12, 15 and 20 ns High-performance, low-power CMOS process Multiple center power and ground pins for greater noise immunity Easy memory expansion with CE\ and OE\ options CE\ power-down Fully static operation: no clock or refresh required TTL compatible inputs and outputs Single 3.3V power supply
AS5LC1008
PIN ASSIGNMENT
(Top View)
32-Pin, 400-mil Plastic SOJ (DJ) & Ceramic SOJ (DCJ)
OPTIONS
Timing 10ns access 12ns access 15ns access 20ns access Package Plastic SOJ (32-pin, 400-mil) *Ceramic SOJ (32-pin, 400-mil) Operating Temperature Ranges -Military (-55oC to +125oC) -Industrial (-40oC to +85oC)
MARKING
-10 -12 -15 -20
A0 A1 A2 A3 CE\ I/O 0 I/O 1 Vcc GND I/O 2 I/O 3 WE\ A4 A5 A6 A7
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
A16 A15 A14 A13 OE\ I/O 7 I/O 6 GND Vcc I/O 5 I/O 4 A12 A11 A10 A9 A8
DJ DCJ
No. 906 No. 501
PIN FUNCTIONS
XT IT
*Consult Factory, Possible Future Offering
GENERAL DESCRIPTION
The ASI AS5LC1008 is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The AS5LC1008 is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE\ is HIGH (deselected), the device assumes a standby ……
