器件名称: MSM8521CB-020
功能描述: 512K x 8 Static RAM Issue 5.2 April 2001
文件大小: 150.98KB 共11页
简 介:512K x 8 Static RAM
MSM8512C - 020 Issue 5.2 April 2001
Description
The MSM8512C is a 512K x 8 SRAM monolithic device available in Chip Size BGA (Ball Grid Array) package, with access times of 20ns. The device is available to commercial and industrial temperature grades. The Chip Size BGA provides an ultra high density memory packaging solution. The Chip Size BGA occupies less than 50% of the board area of conventional SOP, SOJ and TSOP II packages.
Block Diagram
/CS /OE /WE
A0 A1 A2 A3 A4 A5 A6 A7 A8
512K x 8 SRAM
D0 D1 D2 D3 D4 D5 D6 D7
Features
Access times of 20 ns. 5V + 10%, (3.3V Under Development) Commercial & Industrial temperature grades Chip Size BGA. 48 pad, 1mm pad pitch, package. Eutectic 63/67 solder ball attach. Low Power Dissipation. Operating 1 W (max) Standby (CMOS) 66mW (max) Completely Static Operation. 4 layer BT substrate with power and ground planes. Pinout and footprint will remain the same in the event of a die shrink.
Pin Definition See page 2.
Pin Functions
Description Address Input Data Input/Output Chip Select Write Enable Output Enable No Connect Power Ground Signal A0~A18 D0~D7 /CS /WE /OE NC VCC GND
A18 A17 A16 A15 A14 A13 A12 A11 A10 A9
Package Details
48D - 48 Ball, 1mm pitch Chip Size BGA Max. Dimensions (mm) - 8.00 x 10.00 x 1.40
Pin Definition - MSM8512B
Pinout (Top View)
1
Pin A1 Ident.
2
3
4
5
6
A B C D E F G H
A4 NC D0 VCC VSS D3
A2 /CS NC D1 D2 NC
A0 A1 A3 A18 NC A5 A7 A8
A17 A15 NC A16 NC /OE NC NC A……
