器件名称: FDS2672
功能描述: N-Channel UltraFET Trench
文件大小: 412.06KB 共6页
简 介:FDS2672 N-Channel UltraFET Trench MOSFET
August 2006
FDS2672 N-Channel UltraFET Trench MOSFET
200V, 3.9A, 70m
Features
Max rDS(on) = 70m at VGS = 10V, ID = 3.9A Max rDS(on) = 80m at VGS = 6V, ID = 3.5A Fast switching speed High performance trench technology for extremely low rDS(on) RoHS compliant
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General Description
This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced UItraFET Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application
DC-DC conversion
D SO-8
D
D
D
5 6 7 4 3 2 1
Pin 1
S
S
S
G
8
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Temperature (Note 3) (Note 1a) (Note 1b) (Note 1a) Ratings 200 ±20 3.9 50 37.5 2.5 1.0 -55 to 150 Units V V A mJ W °C
Thermal Characteristics
RθJC RθJA RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) (Note 1b) 25 50 125 °C/W
Package Marking and Ordering Information
Device Marking FDS2672 Device FDS2672 Reel Size 13’’
1
Tape Width 12mm
Quantity 2500 units
www.fairchildsemi.com
2006 Fairchild Semiconductor Corporation FDS2672 Rev. B
FDS2672 N-Channel UltraFET Trench MOSFET
Electrical Ch……
