器件名称: SLN-286
功能描述: DC-3.5 GHz, 3Volt 50 Ohm LNA MMIC Amplifier
文件大小: 99.52KB 共3页
简 介:Product Description
Stanford Microdevices’ SLN-286 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost surface mount plastic package. A Darlington configuration is used for broadband performance from DC-3.5 GHz. The SLN-286 needs only 2 DC-Blocking capacitors and a bias resistor for operation. Noise figure may be optimized by using 2-element matching at the input to yield <2.0 dB noise figure. This 50 Ohm LNA requires only a single supply voltage and draws only 5mA. For broadband applications, it may be biased at 4mA with minimal effect on noise figure and gain. The SLN-286 is available in tape and reel at 1000, 3000 and 5000 devices per reel.
SLN-286
DC-3.5 GHz, 3Volt 50 Ohm LNA MMIC Amplifier
Noise Figure vs. Frequency
2.5 4 mA 2
Product Features Patented, Reliable GaAs HBT Technology Low Noise Figure: 1.7 dB from 0.1 to 1.5 GHz High Associated Gain: 27 dB Typ. at 2.0 GHz True 50 Ohm MMIC : No External Matching
Required
Low Noise MMICs
dB
1.5 5 mA
Low Current Draw : Only 5 mA at 3V Low Cost Surface Mount Plastic Package Applications AMPS, PCS, DECT, Handsets Tri-Band & Broadband Receivers
1 0.1 0.5 1 1.5 2 2.5 3 3.5
GHz
Electrical Specifications at Ta = 25C
S ym bol P a r a m e te r s : T e s t C o n d i tio n s U n its M in . Ty p . M ax.
NF 50 Ohm S 21 VSW R NF 50 Ohm S 21 VSW R
N o is e F ig u r e in 5 0 O h m s : V d s = 3 .0 V , Id s = 5 m A 5 0 O h m G a in : V d s = 3 .0 V , Id s = 5 m A 5 0 O h m M a ……
