器件名称: IRF1405ZSPBF
功能描述: AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 4.9m
文件大小: 812.24KB 共13页
简 介:AUTOMOTIVE MOSFET
Features
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Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
HEXFET Power MOSFET
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IRF1405ZPbF IRF1405ZSPbF IRF1405ZLPbF
VDSS = 55V RDS(on) = 4.9m
PD - 97018
G S
Description
Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
ID = 75A
TO-220AB IRF1405ZPbF
D2Pak IRF1405ZSPbF
TO-262 IRF1405ZLPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation
Max.
150 110 75 600 230 1.5 ± 20
Units
A
W W/°C V mJ A mJ
Linear Derating Factor VGS Gate-to-Source Voltage EAS (Thermally limited) Single Pulse Avalanche Energy EAS (Tested ) Single Pulse Avalanche Energy Tested Value
d
IAR EAR TJ TSTG
Avalanche Current
Repetitive Avalanche Energy Operating Junction and Storage Temperature Range
h
270 420 See……
