器件名称: 5SDA10D2003
功能描述: Avalanche Rectifier Diode
文件大小: 33.08KB 共2页
简 介:Key Parameters VRRM = 2300 IFAVM = 1140 IFSM = 13.5 VF0 = 0.83 rF = 0.30
V A kA V m
Avalanche Rectifier Diode
5SDA 10D2303
Doc. No. 5SYA 1120 - 01 Apr-98
Features
Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation Self protected against transient overvoltages Guaranteed maximum avalanche power dissipation Industry standard housing
Blocking
Part number VRRM VRSM IRRM PRSM 5SDA 10D2303 2300 2530 ≤ ≤ ≤ 5SDA 10D2003 2000 2200 50 70 50 mA kW kW 5SDA 10D1703 Condition 1700 1870 f tP tP tP = 50 Hz = 10 ms = 20 s = 20 s tP Tj Tj Tj Tj = 10 ms = 160°C = 160°C = 45°C = 160°C
VRRM
Mechanical data
FM a Mounting force min. max. Acceleration Device unclamped Device clamped Weight Surface creepage distance Air strike distance 10 kN 12 kN 50 m/s 2 200 m/s 0.25 kg 30 mm 20.5 mm
2
m DS Da
ABB Semiconductors AG
ABB Semiconductors AG
5SDA 10D2303
On-state
IFAVM IFRMS IFSM It VF0 rF VF min VF max
2
Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral Threshold voltage Slope resistance On-state voltage On-state voltage
1140 A 1790 A 13.5 kA 14.5 kA 910103 A s
2 2
Half sine wave, TC = 85°C tp tp tp tp IF IF = = = = 10 ms 8.3 ms 10 ms 8.3 ms Tj = Tj = 160°C 25°C Tj = 160°C
After surge: VR ≈ 0V
87510 A s
3
0.83 V 0.30 m 1.20 V 1.35 V
= 1000 - 3000 A = 1800 A
Thermal
Tj RthJC Storage and operating junction temperature range Thermal resistance junction to case Rth……
