器件名称: 5SDD51L2800
功能描述: Rectifier Diode
文件大小: 678.28KB 共6页
简 介:VRSM IF(AV)M IF(RMS) IFSM VF0 rF
= = = = = =
2800 5380 8450 65×103 0.77 0.082
V A A A V m
Rectifier Diode
5SDD 51L2800
Doc. No. 5SYA1103-01 Feb. 05
Patented free-floating silicon technology Very low on-state losses High average and surge current.
Blocking
Maximum rated values
1)
Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Non-repetitive peak reverse voltage
Characteristic values
Symbol Conditions VRRM VRSM VRSM f = 50 Hz, tp = 10ms, Tj = 175°C f = 5 Hz, tp = 10ms, Tj = 175°C f = 50 Hz, tp ≤ 5ms, Tj = ...175°C
Value 2000 2800 3000
Unit V V V
Parameter Max. (reverse) leakage current
Symbol Conditions IRRM VRRM, Tj = 175°C
min
typ
max 400
Unit mA
Tvj = -40°C reduces VRSM and VRRM by 5%.
Mechanical data
Maximum rated values
1)
Parameter Mounting force Acceleration Acceleration
Characteristic values
Symbol Conditions FM a a Device unclamped Device clamped
min 63
typ 70
max 77 50 100
Unit kN m/s m/s
2 2
Parameter Weight Housing thickness Surface creepage distance
Symbol Conditions m H DS FM = 70 kN, Ta = 25 °C
min 25.7 35
typ
max 1.45 26.3
Unit kg mm mm mm
Air strike distance Da 14 1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SDD 51L2800
On-state
Maximum rated values
1)
Parameter Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Li……
