器件名称: 5SDD54N4000
功能描述: Rectifier Diode
文件大小: 359.39KB 共6页
简 介:VRSM IF(AV)M IF(RMS) IFSM VF0 rF
= = = = = =
4000 5200 8200 85×103 0.8 0.086
V A A A V m
Rectifier Diode
5SDD 54N4000
Doc. No. 5SYA1171-00 Dec. 03
Patented free-floating silicon technology Very low on-state losses Optimum power handling capability
Blocking
Maximum rated values
1)
Parameter Repetitive peak reverse voltage
Symbol Conditions VRRM f = 50 Hz, tp = 10ms, Tj = 0...150°C f = 5 Hz, tp = 10ms, Tj = 0...150°C
Value 3600 4000
Unit V V
Non - repetitive peak reverse voltage VRSM
Characteristic values
Parameter Max. (reverse) leakage current
Symbol Conditions IRRM VRRM, Tj = 150°C
min
typ
max 400
Unit mA
Mechanical data
Maximum rated values
1)
Parameter Mounting force Acceleration Acceleration
Characteristic values
Symbol Conditions FM a a Device unclamped Device clamped
min 81
typ 90
max 108 50 100
Unit kN m/s m/s
2 2
Parameter Weight Housing thickness Surface creepage distance
Symbol Conditions m H DS FM = 90 kN, Ta = 25 °C
min
typ
max 2.8 35.9
Unit kg mm mm mm
56
Air strike distance Da 22 1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SDD 54N4000
On-state
Maximum rated values
1)
Parameter Max. average on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral
Symbol Conditions IF(AV)M 50 Hz, Half sine wave, TC = 85 °C……
