器件名称: 5STP16F2200
功能描述: Phase Control Thyristor
文件大小: 291.79KB 共5页
简 介:VDSM ITAVM ITRMS ITSM VT0 rT
= = = = = =
2800 V 1400 A 2210 A 18000 A 0.82 V 0.370 m
Phase Control Thyristor
5STP 16F2800
Doc. No. 5SYA1022-03 Sep. 01
Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability
Blocking
Part Number VDRM VRSM1 IDRM IRRM dV/dtcrit VRRM 5STP 16F2800 5STP 16F2600 5STP 16F2200 Conditions 2800 V 3000 V 2600 V 2800 V ≤ 200 mA ≤ 200 mA 1000 V/s 2200 V 2400 V f = 50 Hz, tp = 10ms tp = 5ms, single pulse VDRM VRRM Tj = 125°C
Exp. to 0.67 x VDRM, Tj = 125°C
Mechanical data
FM Mounting force nom. min. max. a Acceleration Device unclamped Device clamped m DS Da Weight Surface creepage distance Air strike distance 50 m/s2 100 m/s2 0.6 kg 25 mm 14 mm 22 kN 14 kN 24 kN
ABB Semiconductors AG reserves the right to change specifications without notice.
5STP 16F2800
On-state
ITAVM ITRMS ITSM It
2
Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral
1400 A 2210 A 18000 A 19000 A
2 2
Half sine wave, TC = 70°C tp = tp = 10 ms 8.3 ms 10 ms 8.3 ms 2000 A 800 - 2400 A Tj = 125°C Tj = 125°C After surge: VD = VR = 0V
1620 kA s tp = 1498 kA s tp =
VT VT0 rT IH IL
On-state voltage Threshold voltage Slope resistance Holding current
1.55 V 0.82 V 0.370 m 25-75 mA 15-60 mA
IT = IT =
Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
Latching current
100- mA 500 50-200 mA
Switching
di/dtc……
