器件名称: 5STP24H2800
功能描述: Phase Control Thyristor
文件大小: 216.36KB 共5页
简 介:VDSM ITAVM ITRMS ITSM VT0 rT
= = = = = =
2800 V 2625 A 4120 A 43000 A 0.85 V 0.160 m
Phase Control Thyristor
5STP 24H2800
Doc. No. 5SYA1047-02 Sep. 01
Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate
Blocking
Part Number VDRM VRSM1 IDRM IRRM dV/dtcrit VRRM 5STP 24H2800 5STP 24H2600 5STP 24H2200 Conditions 2800 V 3000 V 2600 V 2800 V ≤ 300 mA ≤ 300 mA 1000 V/s 2200 V 2400 V f = 50 Hz, tp = 10ms tp = 5ms, single pulse VDRM VRRM Tj = 125°C
Exp. to 0.67 x VDRM, Tj = 125°C
Mechanical data
FM Mounting force nom. min. max. a Acceleration Device unclamped Device clamped m DS Da Weight Surface creepage distance Air strike distance 50 m/s2 100 m/s2 0.9 kg 36 mm 15 mm 50 kN 45 kN 60 kN
ABB Semiconductors AG reserves the right to change specifications without notice.
5STP 24H2800
On-state
ITAVM ITRMS ITSM It
2
Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral
2625 A 4120 A 43000 A 46000 A
2 2
Half sine wave, TC = 70°C tp = tp = 10 ms 8.3 ms 10 ms 8.3 ms 3000 A Tj = 125°C Tj = 125°C After surge: VD = VR = 0V
9245 kA s tp = 8781 kA s tp =
VT VT0 rT IH IL
On-state voltage Threshold voltage Slope resistance Holding current
1.35 V 0.85 V 0.160 m 25-75 mA 15-60 mA
IT =
IT = 1500 - 4500 A Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
Latching current
150- m……
