器件名称: 5STP52U4600
功能描述: Phase Control Thyristor
文件大小: 530.13KB 共6页
简 介:VDRM VDSM IT(AV)M IT(RMS) ITSM V(T0) rT
= = = = = = =
4400 5200 4120 6470 85.2×103 1.04 0.115
V V A A A V m
Phase Control Thyristor
5STP 52U5200
Doc. No. 5SYA1042-02 Dec. 03
Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate
Blocking
Maximum rated values
1)
Symbol VDSM, VRSM VDRM, VRRM VRSM dV/dtcrit Parameter
Conditions f = 5 Hz, tp = 10 ms f = 50 Hz, tp = 10 ms tp = 5 ms, single pulse Exp. to 0.67 x VDRM, Tvj = 110°C Symbol Conditions IDSM IRSM
5STP 52U5200 5STP 52U5000 5200 V 4400 V 5700 V 5000 V 4200 V 5500 V 2000 V/s min typ
5STP 52U4600 4600 V 4000 V 5100 V
Characteristic values
max 600 600
Unit mA mA
Forward leakage current Reverse leakage current
VDSM, Tvj = 110°C VRSM, Tvj = 110°C
Mechanical data
Maximum rated values
1)
Parameter Mounting force Acceleration Acceleration
Characteristic values
Symbol Conditions FM a a Device unclamped Device clamped
min 120
typ 135
max 160 50 100
Unit kN m/s m/s Unit kg mm mm mm
2 2
Parameter Weight Housing thickness Surface creepage distance
Symbol Conditions m H DS FM = 135 kN, Ta = 25 °C
min 34.4 56
typ
max 3.6 35.4
Air strike distance Da 22 1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5STP 52U5200
On-state
Maximum ……
