器件名称: 0910-300M
功能描述: 300 Watts - 50 Volts, 150us, 5% Radar 890 - 100
文件大小: 108.24KB 共4页
简 介:0910-300M
0910– 300M
300 Watts - 50 Volts, 150s, 5% Radar 890 - 1000 MHz
GENERAL DESCRIPTION
The 0910-300M is an internally matched, COMMON BASE transistor capable of providing 300 Watts of pulsed RF output power at 150 s pulse width, , 5% duty factor across the band 900 to 1000 MHz. This hermetically solder-sealed transistor is specifically designed for P-Band radar applications. It utilizes gold metallization and diffused emitter ballasting to provide high reliability and supreme ruggedness.
CASE OUTLINE 55KT, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 600 Watts
65 Volts 3.5 Volts 20 Amps - 65 to + 200oC + 200oC
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL Pout Pg ηc Rl Droop VSWR1 VSWRs
CHARACTERISTICS
TEST CONDITIONS Freq = 890 – 1000 MHz Vcc = 50 Volts Pin = 33 Watts Pulse Width = 150s Duty Factor = 5%
MIN
TYP
MAX
UNITS
Power Out Power Gain Collector Efficiency Input Return loss
Load Mismatch Tolerance Droop Load Mismatch - Stability
300 9.6 40 -9
425 45 0.5 3:1 2:1
Watts dB % dB dB
Note 1: Pulse condition of 150sec, 10%. Bvces Ices θjc1 Collector to Emitter Breakdown Collector to Emitter Leakage Thermal Resistance Ic = 80 mA Vce = 50 Volts Rated Pulse Condition 65 15 0.29 Volts mA o C/W
Issue Nov 2005
ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT ……
