器件名称: T2316405A-10
功能描述: 4M x 4 DYNAMIC RAM EDO PAGE MODE
文件大小: 136.79KB 共9页
简 介:tm
TE CH
T2316405A Preliminary T2316407A
DRAM
FEATURES
Industry-standard x 4 pinouts and timing functions power supply : T2316405A 2.6V(±0.2V) T2316407A 3.3V(±0.3V) All device pins are TTL- compatible. 2048-cycle refresh in 32 ms. Refresh modes: RAS only, CAS BEFORE RAS (CBR) and HIDDEN. Extended data-out (EDO) PAGE MODE access cycle.
4M x 4 DYNAMIC RAM
EDO PAGE MODE GRNERAL DESCRIPTION
The T2316405A and T2316407A is a randomly accessed solid state memory containing 16,777,216 bits organized in a x 4 configuration. It offers Fast Page mode with Extended Data Output (EDO). During READ or WRITE cycles, each of the 4 memory bits (1 bit per I/O) is uniquely addressed through the 22 address bits, which are entered 11 bits (A0-A10) at a time. RAS latches the first 11 bits and CAS latches the latter 11 bits. A READ or WRITE cycle is selected w ith WE WE the input. A logic HIGH on dictates WE READ mode while a logic LOW on dictates WRITE mode. During a WRITE cycle, data -in is latched by the falling edge of WE or CAS , whichever occurs last. When WE goes Low prior to CAS going LOW ( EARLY WRITE cycle), the J S output pins remain open (High-Z) until the next CAS cycle. A Late Write or Read-Modify-Write occurs. When WE falls after CAS was taken LOW (Late Write cycle). OE must be taken HIGH to disable the data-outputs prior to applying input data. The four data inputs and four data outputs are routed through four pins using common I/O, and pin direction is controlled by WE and……
