器件名称: TMS44400P
功能描述: 1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES
文件大小: 657.43KB 共25页
简 介:TMS44400, TMS44400P, TMS46400, TMS46400P 1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES
SMHS562C – MAY 1995 – REVISED NOVEMBER 1996
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Organization . . . 1 048 576 × 4 Single 5-V Power Supply for TMS44400 / P (± 10% Tolerance) Single 3.3-V Power Supply for TMS46400 / P (± 10% Tolerance) Low Power Dissipation ( TMS46400P only) 200-A CMOS Standby 200-A Self Refresh 300-A Extended-Refresh Battery Backup Performance Ranges:
ACCESS ACCESS ACCESS READ TIME TIME TIME OR WRITE (tRAC) (tCAC) (tAA) CYCLE (MAX) (MAX) (MAX) (MIN) 60 ns 15 ns 30 ns 110 ns 70 ns 18 ns 35 ns 130 ns 80 ns 20 ns 40 ns 150 ns
DGA PACKAGE ( TOP VIEW )
DJ PACKAGE ( TOP VIEW )
DQ1 DQ2 W RAS A9 A0 A1 A2 A3 VCC
1 2 3 4 5 9 10 11 12 13
26 25 24 23 22 18 17 16 15 14
VSS DQ4 DQ3 CAS OE A8 A7 A6 A5 A4
DQ1 DQ2 W RAS A9 A0 A1 A2 A3 VCC
1 2 3 4 5 9 10 11 12 13
26 25 24 23 22 18 17 16 15 14
VSS DQ4 DQ3 CAS OE A8 A7 A6 A5 A4
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Enhanced Page-Mode Operation for Faster Memory Access CAS-Before-RAS ( CBR) Refresh Long Refresh Period 1024-Cycle Refresh in 16 ms 128 ms (MAX) for Low-Power, Self-Refresh Version ( TMS4x400P) 3-State Unlatched Output Texas Instruments EPIC CMOS Process
A0 – A9 CAS DQ1 – DQ4 OE RAS VCC VSS W
Address Inputs Column-Address Strobe Data In Output Enable Row-Address Strobe 5-V or 3.3-V Supply Ground Write Enable
D
Operating Free-Air Temperature Range 0°C to 70°C
description
AVAILABLE OPTIONS
The TMS4x400 series is a set of high-speed, SELF-REFRESH 4 194 304-bit d……
