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TPS28226DR

器件名称: TPS28226DR
功能描述: High-Frequency 4-A Sink Synchronous MOSFET Drivers
文件大小: 1134.7KB    共35页
生产厂商: TI
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简  介:TPS28226 www.ti.com SLUS791 – OCTOBER 2007 High-Frequency 4-A Sink Synchronous MOSFET Drivers 1 FEATURES Drives Two N-Channel MOSFETs with 14-ns Adaptive Dead Time Gate Drive Voltage: 6.8 V Up to 8.8 V Wide Power System Train Input Voltage: 3 V Up to 27 V Wide Input PWM Signals: 2.0 V up to 13.2-V Amplitude Capable Drive MOSFETs with ≥40-A Current per Phase High Frequency Operation: 14-ns Propagation Delay and 10-ns Rise/Fall Time Allow FSW - 2 MHz Capable Propagate <30-ns Input PWM Pulses Low-Side Driver Sink On-Resistance (0.4 ) Prevents dV/dT Related Shoot-Through Current 3-State PWM Input for Power Stage Shutdown Space Saving Enable (input) and Power Good (output) Signals on Same Pin Thermal Shutdown UVLO Protection Internal Bootstrap Diode Economical SOIC-8 and Thermally Enhanced 3-mm x 3-mm DFN-8 Packages High Performance Replacement for Popular 3-State Input Drivers DESCRIPTION The TPS28226 is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase dc-to-dc converters. The TPS28226 is a solution that provides highly efficient, small size low EMI emmissions. The performance is achieved by up to 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capability. The 0.4- impedance for the lower gate driver holds the gate of power MOSFET below its threshold and en……
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