器件名称: VDS7616A4A-6
功能描述: Synchronous DRAM(2M X 16 Bit X 4 Banks)
文件大小: 576.45KB 共8页
简 介:V-Data
Synchronous DRAM
General Description
The VDS7616A4A are four-bank Synchronous DRAMs organized as 2,097152 words x 16 bits x 4 banks. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth high performance memory system applications
VDS7616A4A
2M x 16 Bit x 4 Banks
Features
JEDEC standard LVTTL 3.3V power supply MRS Cycle with address key programs -CAS Latency (2 & 3) -Burst Length (1,2,4,8,& full page) -Burst Type (sequential & Interleave) 4 banks operation All inputs are sampled at the positive edge of the system clock Burst Read single write operation Auto & Self refresh 4096 refresh cycle DQM for masking Package:54-pins 400 mil TSOP-Type II
Ordering Information.
Part No. VDS7616A4A-55 VDS7616A4A-6 VDS7616A4A-7 Frequency 183Mhz 166Mhz 143Mhz Interface LVTTL LVTTL LVTTL Package 400mil 54pin TSOPII 400mil 54pin TSOPII 400mil 54pin TSOPII
Pin Assignment
VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 VDD LDQM /WE /CAS /RAS /CS BS0 BS1 A10/AP A0 A1 A2 A3 VDD
1 2 3
4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27
54
53
52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28
Vss DQ15 VssQ DQ14 DQ13 VDDQ DQ12 DQ11 VSSQ DQ10 DQ9 VDDQ DQ8 VSS NC UDQM CLK CKE NC A11 A9 A8 A7 A6 A5 A4 VSS
54-pin plastic T……
