器件名称: VDS8616A8A-75A
功能描述: Synchronous DRAM(4M X 16 Bit X 4 Banks)
文件大小: 538.7KB 共8页
简 介:V-Data
Synchronous DRAM General Description
The VDS8616A8A are four-bank Synchronous DRAMs organized as 4,194,304 words x 16 bits x 4 banks, Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth high performance memory system applications
VDS8616A8A
4M x 16 Bit x 4 Banks Features
JEDEC standard LVTTL 3.3V power supply MRS Cycle with address key programs -CAS Latency (2 & 3) -Burst Length (1,2,4,8,& full page) -Burst Type (sequential & Interleave) 4 banks operation All inputs are sampled at the positive edge of the system clock Burst Read single write operation Auto & Self refresh DQM for masking 8192 Refresh Cycles Package:54-pins 400 mil TSOP-Type II
Ordering Information.
Part No. VDS8616A8A-75 VDS8616A8A-75A Frequency 133Mhz-333 133Mhz-222 Interface LVTTL LVTTL Package 400mil 54pin TSOPII 400mil 54pin TSOPII
Pin Assignment
VDD DQ0 VDDQ NC DQ1 VSSQ NC DQ2 VDDQ NC DQ3 VSSQ NC VDD NC /WE /CAS /RAS /CS BA0 BA1 A10/AP A0 A1 A2 A3 VDD
1 2 3
4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27
54
53
52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28
Vss DQ7 VssQ NC DQ6 VDDQ NC DQ5 VSSQ NC DQ4 VDDQ NC VSS NC/RFU DQM CK CKE NC A11 A9 A8 A7 A6 A5 A4 VSS
54-pin plastic TSOP II 400 mil
Rev 1.0 December, 2001
1
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