器件名称: VG26V17400FJ-5
功能描述: 4,194,304 x 4 - Bit CMOS Dynamic RAM
文件大小: 208.8KB 共25页
简 介:VIS
Description or 3.3V only power supply. Low voltage operation is more suitable to be used on battery
VG26(V)(S)17400FJ 4,194,304 x 4 - Bit CMOS Dynamic RAM
The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only
backup, portable electronic application. A new refresh feature called “ self-refresh “ is supported and very slow CBR cycles are being performed. It is packaged in JEDEC standard 26/24 - pin plastic SOJ or TSOP (II).
Features Single 5V ( ± 10 %) or 3.3V (+10%,-5%) only power supply High speed tRAC access time : 50/60 ns Low power dissipation - Active mode : 5V version 605/550 mW (Max.) 3.3V version 396/360 mW (Max.) - Standby mode : 5V version 1.375 mW (Max.) 3.3V version 0.54 mW (Max.) Fast Page Mode access I/O level : TTL compatible (Vcc = 5V) LVTTL compatible (Vcc = 3.3V) 2048 refresh cycles in 32 ms (Std) or 128ms (S - version) 4 refresh mode : - RAS only refresh - CAS-before-RAS refresh - Hidden refresh - Self - refresh (S - version)
Document :
Rev.
Page 1
VIS
Pin configuration
26/24 - PIN 300mil Plastic SOJ
VSS DQ4 DQ3 CAS OE A9 VCC DQ1 DQ2 WE RAS NC
1 2 3 4 5 6 26 25 24 23 22 21
VG26(V)(S)17400FJ 4,194,304 x 4 - Bit CMOS Dynamic RAM
VG26(V) (S)17400EJ
A10 A0 A1 A2 A3 VCC
8 9 10 11 12 13
19 18 17 16 15 14
A8 A7 A6 A5 A4 VSS
Pin Description
Pin Name A0 - A10 Function Address inputs - Row address - Column address - Refre……
