器件名称: FMB3946
功能描述: NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package
文件大小: 30.19KB 共2页
简 介:FMB3946
Discrete Power & Signal Technologies
FMB3946
C2 E1 C1 Package: SuperSOT-6 Device Marking: .002 B2 E2 B1 Note: The " . " (dot) signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device.
NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package
This complementary dual device was designed for use as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier. Sourced from Process 23 (NPN) and Process 66 (PNP).
Absolute Maximum Ratings*
Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
TA
= 25°C unless otherwise noted
Value 40 40 5 200 -55 to +150
Units V V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol PD RθJA
TA
= 25°C unless otherwise noted
Characteristics Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient
Max 700 5.6 180
Units mW mW/°C °C/W
1997 Fairchild Semiconductor Corporation
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fmb3946.lwpPr23&66(Y2)
FMB3946
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NPN & PNP Complementary Dual Transistor Electrical Chara……
