器件名称: 20DBL0629
功能描述: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier
文件大小: 209.78KB 共6页
简 介:18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier
September 2005 - Rev 01-Sep-05
20DBL0629 Features
Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010
Chip Device Layout
General Description
Mimix Broadband's 18.0-21.0/36.0-42.0 GHz GaAs MMIC doubler integrates a doubler and 4-stage power amplifier. The device provides better than +26.0 dBm output power and has excellent fundamental rejection. This MMIC uses Mimix Broadband’s 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Pointto-Point Radio, LMDS, SATCOM and VSAT applications.
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Units GHz GHz dB dB dBc dBm dBm V V V V mA mA mA Min. 18.0 36.0 -
Absolute Maximum Ratings
Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (RF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch)
+6.0 VDC 800 mA +0.3 VDC TBD -65 to +165 OC -55 to MTTF Table1 MTTF Table 1
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter Input Frequency Range (fin) Output Frequency Range……
