器件名称: MJE171_06
功能描述: Complementary Plastic Silicon Power Transistors 40 60 80 VOLTS 12.5 WATTS
文件大小: 83.18KB 共6页
简 介:MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN)
Preferred Device
Complementary Plastic Silicon Power Transistors
The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications.
Features http://onsemi.com
CollectorEmitter Sustaining Voltage
VCEO(sus) = 40 Vdc MJE170, MJE180 = 60 Vdc MJE171, MJE181 = 80 Vdc MJE172, MJE182 DC Current Gain hFE = 30 (Min) @ IC = 0.5 Adc = 12 (Min) @ IC = 1.5 Adc CurrentGain Bandwidth Product fT = 50 MHz (Min) @ IC = 100 mAdc Annular Construction for Low Leakages ICBO = 100 nA (Max) @ Rated VCB Epoxy Meets UL 94 V0 @ 0.125 in ESD Ratings: Machine Model, C Human Body Model, 3B PbFree Packages are Available*
3 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 40 60 80 VOLTS 12.5 WATTS
TO225AA CASE 7709 STYLE 1 3 2 1
MAXIMUM RATINGS
CollectorBase Voltage Rating Symbol VCB Value 60 80 100 40 60 80 Unit Vdc MJE170, MJE180 MJE171, MJE181 MJE172, MJE182 MJE170, MJE180 MJE171, MJE181 MJE172, MJE182 CollectorEmitter Voltage VCEO Vdc EmitterBase Voltage Collector Current Base Current VEB IC IB 7.0 3.0 6.0 1.0 Vdc Adc Adc Continuous Peak Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD PD 1.5 0.012 12.5 0.1 W W/_C W W/_C _C TJ, Tstg 65 to +150 Maximum ratings are those values beyond which device damage can oc……
