器件名称: 28MPA0304
功能描述: 24.0-34.0 GHz GaAs MMIC Power Amplifier
文件大小: 345.17KB 共6页
简 介:24.0-34.0 GHz GaAs MMIC Power Amplifier
May 2005 - Rev 05-May-05
28MPA0304 Chip Device Layout
Features
Excellent Saturated Output Stage 16.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010
General Description
Mimix Broadband’s three stage 24.0-34.0 GHz GaAs MMIC power amplifier has a small signal gain of 16.0 dB with a +24.0 dBm saturated output power. This MMIC uses Mimix Broadband’s 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-toPoint Radio, LMDS, SATCOM and VSAT applications.
uc
Units GHz dB dB dB dB dB dBm VDC VDC mA Min. 24.0 -1.0 -
Absolute Maximum Ratings
Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch)
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness (S21) Reverse Isolation (S12) Saturated Output Power (Psat) Drain Bias Voltage (Vd1,2,3) Gate Bias Voltage (Vg1,2,3) Supply Current (Id) (Vd=6.0V, Vg=-0.9……
