器件名称: 74HC2G66DP
功能描述: Bilateral switches
文件大小: 130.35KB 共20页
简 介:INTEGRATED CIRCUITS
DATA SHEET
74HC2G66; 74HCT2G66 Bilateral switches
Product specication Supersedes data of 2003 Nov 26 2004 May 19
Philips Semiconductors
Product specication
Bilateral switches
FEATURES Wide supply voltage range from 2.0 V to 9.0 V Very low ON-resistance: – 41 (typical) at VCC = 4.5 V – 30 (typical) at VCC = 6.0 V – 21 (typical) at VCC = 9.0 V. High noise immunity Low power dissipation ± 25 mA switch current SOT505-2 package ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V. Specified from 40 °C to +85 °C and 40 °C to +125 °C. DESCRIPTION
74HC2G66; 74HCT2G66
The 74HC2G66/74HCT2G66 is a high-speed Si-gate CMOS device. The 74HC2G66/74HCT2G66 provides a dual analog switch. Each switch has two pins (nY and nZ) for input or output and an active HIGH enable input (pin E). When pin E is LOW, the belonging analog switch is turned off.
QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf = 6.0 ns; Vos is the output voltage at pins nY or nZ, whichever is assigned as an output. TYPICAL SYMBOL tPZH/tPZL tPHZ/tPLZ CI CPD CS Notes 1. CPD is used to determine the dynamic power dissipation (PD in W). PD = CPD × VCC2 × fi + (CL +CS) × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; CS = Switch capacitance in pF; VCC = supply voltage in Volts. 2. For 74HC2G66 the condition is VI = GND to VCC. For 74HCT2G66 the condition is VI = GND to VCC 1.5 V. PARAMET……
