器件名称: 74HCT3G07
功能描述: Buffer with open-drain outputs
文件大小: 80.58KB 共14页
简 介:INTEGRATED CIRCUITS
DATA SHEET
74HC3G07; 74HCT3G07 Buffer with open-drain outputs
Product specication 2003 Oct 15
Philips Semiconductors
Product specication
Buffer with open-drain outputs
FEATURES Wide supply voltage range from 2.0 to 6.0 V High noise immunity Low power dissipation ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V. Multiple package options Specified from 40 to +85 °C and 40 to +125 °C. DESCRIPTION
74HC3G07; 74HCT3G07
The 74HC3G/HCT3G07 is a high-speed Si-gate CMOS device. Specified in compliance with JEDEC standard no. 7A. The 74HC3G/HCT3G07 provides three non-inverting buffers. The outputs of the 74HC3G/HCT3G07 devices are open drains and can be connected to other open-drain outputs to implement active-LOW, wired-OR or active-HIGH wired-AND functions. For digital operation this device must have a pull-up resistor to establish a logic HIGH-level.
QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns. TYPICAL SYMBOL tPZL tPLZ CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in W). PD = CPD × VCC2 × fi × N + ∑ (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total load switching outputs; ∑ (CL × VCC2 × fo) = sum of outputs. 2. For 74HC3G07 the condition is VI = GND to VCC. For 74HCT3G07 the condition is VI = GND to VCC 1.5 V. PARAMETER propagation delay nA to nY propagat……
