器件名称: 75NF75
功能描述: HEXFET
文件大小: 231.64KB 共2页
简 介:75NF75
HEXFET
z z z z z Dynamic dv/dt Rating 175°C Operating Temperature Fast switching Ease of Paralleling Simple Drive Requirements
Power MOSFET
VDSS = 75V ID25 = 75A RDS(ON) = 13.0 mΩ
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Pin1–Gate Pin2–Drain Pin3–Source
Absolute Maximum Ratings
Parameter ID@TC=25°C IDM Continuous Drain Current, VGS@10V Pulsed Drain Current
②
Max. 75 60 300 200 1.5 ±20
③ ①
Units A W W/°C V mJ V/ns °C
ID@TC=100°C Continuous Drain Current, VGS@10V PD@TC=25°C Power Dissipation Linear Derating Factor VGS EAR dv/dt TJ TSTG Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque,6-32 or M3 screw
④
23 5.9 –55 to +175 300(1.6mm from case) 10 Ibf . in(1.1N . m)
Thermal Resistance
Parameter RθJC RθCS RθJA Junction-to-case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Min. — — — Typ. — 0.50 — Max. 0.65 — 62 °C /W Units
1
75NF75
HEXFET
Electrical Characteristics @TJ=25 ° C (unless otherwise specified)
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