器件名称: APT25GP90B
功能描述: POWER MOS 7 IGBT
文件大小: 180.99KB 共6页
简 介:TYPICAL PERFORMANCE CURVES
APT25GP90B
APT25GP90B
900V
POWER MOS 7 IGBT
TO-247
The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
G
C
Low Conduction Loss Low Gate Charge Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol VCES VGE VGEM IC1 IC2 ICM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient
100 kHz operation @ 600V, 21A 50 kHz operation @ 600V, 33A SSOA Rated
E
C G E
All Ratings: TC = 25°C unless otherwise specified.
APT25GP90B UNIT
900 ±20 ±30 72 36 110 110A @ 900V 417 -55 to 150 300
Watts °C Amps Volts
Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current
1
@ TC = 150°C
Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX UNIT
900 3 4.5 3.2 2.7 250
A nA
7-2004 050-7477 Rev D
6 3.9
Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 25A, ……
