器件名称: 9N90-T3P-T
功能描述: Power MOSFET
文件大小: 433.85KB 共8页
简 介:UNISONIC TECHNOLOGIES CO., LTD 9N90
900V N-CHANNEL MOSFET
DESCRIPTION
Power MOSFET
The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
1
FEATURES
TO-3P
* RDS(ON) = 1.4 @VGS = 10 V * Ultra low gate charge ( typical 45 nC ) * Low reverse transfer capacitance ( CRSS = typical 14 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
*Pb-free plating product number: 9N90L
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number Normal Lead Free Plating 9N90-T3P-T 9N90L-T3P-T Package TO-3P Pin Assignment 1 2 3 G D S Packing Tube
9N90L-T3P-T (1)Packing Type (2)Package Type (3)Lead Plating (1) T: Tube (2) T3P: TO-3P (3) L: Lead Free Plating, Blank: Pb/Sn
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1 of 8 QW-R502-217.A
9N90
ABSOLUTE MAXIMUM RATING (TC =25℃, unless otherwise specified)
SYMBOL VDSS VGSS ID IDM IAR EAS EAR dv/dt PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TC = 25℃) Pulsed Drain Current (Note 1) Avalanche Current (Note 1) Single Pulsed(Note 2) Avalanche Energy Repetitive(Note 1) Peak Diode Recovery dv/dt (Note 3) Power Dissipation Derate above 25℃
Power MOSFET
RATINGS UNIT 900 V ±30 V 9.0 A 36 A 9.0 A 900 mJ 28 4.0 V/ns 280 W PD 2.22 W/℃ Junction Tem……
