器件名称: AO3401L
功能描述: P-Channel Enhancement Mode Field Effect Transistor
文件大小: 181.24KB 共4页
简 介:AO3401 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard product AO3401 is Pb-free (meets ROHS & Sony 259 specifications). AO3401L is a Green Product ordering option. AO3401 and AO3401L are electrically identical.
Features
VDS (V) = -30V ID = -4.2 A (VGS = -10V) RDS(ON) < 50m (VGS = -10V) RDS(ON) < 65m (VGS = -4.5V) RDS(ON) < 120m (VGS = -2.5V)
TO-236 (SOT-23) Top View G D S G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum -30 ±12 -4.2 -3.5 -30 1.4 1 -55 to 150
Units V V A
TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG
W °C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient C Maximum Junction-to-Lead
Symbol
A A
t ≤ 10s Steady-State Steady-State
RθJA RθJL
Typ 65 85 43
Max 90 125 60
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AO3401
Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On……