器件名称: AO3404L
功能描述: N-Channel Enhancement Mode Field Effect Transistor
文件大小: 110.64KB 共4页
简 介:AO3404 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3404 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device may be used as a load switch or in PWM applications. Standard Product AO3404 is Pb-free (meets ROHS & Sony 259 specifications). AO3404L is a Green Product ordering option. AO3404 and AO3404L are electrically identical.
Features
VDS (V) = 30V ID = 5.8A (VGS = 10V) RDS(ON) < 28m (VGS = 10V) RDS(ON) < 43m (VGS = 4.5V)
TO-236 (SOT-23) Top View G D S G
D
S
Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain A Current Pulsed Drain Current Power Dissipation
B
Maximum 30 ±20 5.8 4.9 20 1.4 1 -55 to 150
Units V V A
TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG
W °C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C
Symbol
A A
t ≤ 10s Steady-State Steady-State
RθJA RθJL
Typ 65 85 43
Max 90 125 60
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AO3404
Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=5.8A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=5.0A Forward Transconductance VDS=5V, ID=5.8A 10 Diode Forward Voltage IS=1A ……
