器件名称: AO3405L
功能描述: P-Channel Enhancement Mode Field Effect Transistor
文件大小: 114.08KB 共4页
简 介:AO3405 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3405 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3405 is Pb-free (meets ROHS & Sony 259 specifications). AO3405L is a Green Product ordering option. AO3405 and AO3405L are electrically identical.
Features
VDS (V) = -30V ID = -2.6 A (V GS = -10V) RDS(ON) < 130m (VGS = -10V) RDS(ON) < 180m (VGS = -4.5V)
TO-236 (SOT-23) Top View G D S G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation
A
Maximum -30 ±12 -2.6 -2.2 -30 1.4 1 -55 to 150
Units V V A
TA=25°C TA=70°C ID IDM PD TJ, TSTG
TA=70°C
W °C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 65 85 43
Max 90 125 60
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AO3405 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-10V, ID=-2.6A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-2A VDS=-5V, ID=-2.5A 7 137 11 -0.83 -1 -2.2 481 VGS=0……
