器件名称: AO3407
功能描述: P-Channel Enhancement Mode Field Effect Transistor
文件大小: 297.24KB 共6页
简 介:Aug 2002
AO3407 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3407 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications.
Features
VDS (V) = -30V ID = -4.1 A RDS(ON) < 52m (VGS = -10V) RDS(ON) < 87m (VGS = -4.5V)
TO-236 (SOT-23) Top View G D S G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation
A B
Maximum -30 ±20 -4.1 -3.5 -20 1.4 1 -55 to 150
Units V V A
TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG
W °C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 65 85 43
Max 90 125 60
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AO3407
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=-4.5V, ID=-3A Forward Transconductance VDS=-5V, ID=-4A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V ……
