器件名称: AO3409L
功能描述: P-Channel Enhancement Mode Field Effect Transistor
文件大小: 113.22KB 共4页
简 介:AO3409 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3409 is Pb-free (meets ROHS & Sony 259 specifications). AO3409L is a Green Product ordering option. AO3409 and AO3409L are electrically identical.
Features
VDS (V) = -30V ID = -2.6 A (VGS = -10V) RDS(ON) < 130m (VGS = -10V) RDS(ON) < 200m (VGS = -4.5V)
TO-236 (SOT-23) Top View G D S G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation
A
Maximum -30 ±20 -2.6 -2.2 -20 1.4 1 -55 to 150
Units V V A
TA=25°C TA=70°C ID IDM PD TJ, TSTG
TA=70°C
W °C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 70 100 63
Max 90 125 80
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AO3409
Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-10V, ID=-2.6A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, I D=-2A Forward Transconductance VDS=-5V, ID=-2.5A 3 ……
