器件名称: AO3413
功能描述: P-Channel Enhancement Mode Field Effect Transistor
文件大小: 222.36KB 共6页
简 介:June 2003
AO3413 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
Features
VDS (V) = -20V ID = -3 A RDS(ON) < 97m (VGS = -4.5V) RDS(ON) < 130m (VGS = -2.5V) RDS(ON) < 190m (VGS = -1.8V)
TO-236 (SOT-23) Top View G D S G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation
A B
Maximum -20 ±8 -3 -2.4 -15 1.4 0.9 -55 to 150
Units V V A
TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG
W °C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 70 100 63
Max 90 125 80
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AO3413
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250A, VGS=0V VDS=-16V, VGS=0V TJ=55°C VDS=0V, VGS=±8V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-3A TJ=125°C VGS=-2.5V, ID=-2.……
