器件名称: AO3424
功能描述: N-Channel Enhancement Mode Field Effect Transistor
文件大小: 130.04KB 共4页
简 介:AOD454 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD454 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOD454 is Pb-free (meets ROHS & Sony 259 specifications). AOD454L is a Green Product ordering option. AOD454 and AOD454L are electrically identical.
TO-252 D-PAK
Features
VDS (V) = 40V ID = 12 A (VGS = 10V) RDS(ON) < 33 m (VGS = 10V) RDS(ON) < 47 m (VGS = 4.5V)
D
Top View Drain Connected to Tab
G S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current
C C C
Maximum 40 ±20 12 12 30 12 20 20 10 2 1.3 -55 to 175
Units V V A A mJ W W °C
TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25°C
Repetitive avalanche energy L=0.1mH Power Dissipation B Power Dissipation
A
TC=100°C TA=25°C TA=70°C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC
Typ 17.4 50 4
Max 30 60 7.5
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AOD454
Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(……
