器件名称: AO3701
功能描述: P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
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简 介:AO3701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
General Description
The AO3701 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. It is ESD protected. Standard Product AO3701 is Pb-free (meets ROHS & Sony 259 specifications). AO3701L is a Green Product ordering option. AO3701 and AO3701L are electrically identical.
SOT-23-5 Top View G S A 1 2 3 5 4 D K
Features
VDS (V) = -20V ID = -3A (VGS = -10V) RDS(ON) < 80m (VGS = -10V) RDS(ON) < 100m (VGS = -4.5V) RDS(ON) < 145m (VGS = -2.5V) ESD Rating: 2000V HBM SCHOTTKY VDS (V) = 20V, I F = 1A, VF<0.5V@0.5A
D
K
G S A
Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current
B A
MOSFET -20 ±12 -3 -2.3 -10
Schottky
Units V V A
VGS TA=70°C ID IDM VKA TA=25°C
A
Schottky reverse voltage Continuous Forward Current Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient Maximum Junction-to-Lead C Thermal Characteristics Schottky Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C
A A A B
TA=70°C TA=25°C TA=70°C
IF IFM PD TJ, TSTG Symbol RθJA RθJL RθJA RθJL 1.1……
