器件名称: AO4404B
功能描述: N-Channel Enhancement Mode Field Effect Transistor
文件大小: 115.93KB 共4页
简 介:AO4404B N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4404B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Standard Product AO4404B is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = 30V ID = 8.5A (VGS = 10V) RDS(ON) < 24m (VGS = 10V) RDS(ON) < 30m (VGS = 4.5V) RDS(ON) < 48m (VGS = 2.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested
D S S S G D D D D
SOIC-8
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain AF Current Pulsed Drain Current Power Dissipation Avalanche Current B
B
Maximum 30 ±12 8.5 7.1 60 2.8 1.8 15 34 -55 to 150
Units V V A
VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD IAR EAR TJ, TSTG
W A mJ °C
Repetitive avalanche energy 0.3mH B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient AF A Maximum Junction-to-Ambient C Maximum Junction-to-Lead
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 37 70 26
Max 45 100 36
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AO4404B
Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250 A, VGS=0V VDS=24V, VG……
