器件名称: AO4407
功能描述: P-Channel Enhancement Mode Field Effect Transistor
文件大小: 168.67KB 共4页
简 介:AO4407 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4407 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4407 is Pb-free (meets ROHS & Sony 259 specifications). AO4407L is a Green Product ordering option. AO4407 and AO4407L are electrically identical.
Features
VDS (V) = -30V ID = -12 A (VGS = -20V) RDS(ON) < 13m (VGS = -20V) RDS(ON) < 14m (VGS = -10V)
SOIC-8 Top View S S S G D D D D
D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation
A B
Maximum -30 ±25 -12 -10 -60 3 2.1 -55 to 150
Units V V A
TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG
W °C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 28 54 21
Max 40 75 30
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AO4407
Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250A, VGS=……
