器件名称: AO4409
功能描述: P-Channel Enhancement Mode Field Effect Transistor
文件大小: 262.9KB 共6页
简 介:Nov 2002
AO4409 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4409 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications.
Features
VDS (V) = -30V ID = -15 A Max RDS(ON) < 7.5m (VGS = -10V) Max RDS(ON) < 12m (VGS = -4.5V)
SOIC-8 Top View S S S G D D D D
D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation
A B
Maximum -30 ±20 -15 -12.8 -80 3 2.1 -55 to 150
Units V V A
TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG
W °C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 26 50 14
Max 40 75 24
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AO4409
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=-4.5V, ID=-10A Forward Transconductance VDS=-5V, ID=-15A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current 35 Conditions ID=-250A, V……
