器件名称: AO4411
功能描述: P-Channel Enhancement Mode Field Effect Transistor
文件大小: 114.41KB 共4页
简 介:AO4411 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4411 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4411 is Pb-free (meets ROHS & Sony 259 specifications). AO4411L is a Green Product ordering option. AO4411 and AO4411L are electrically identical.
Features
VDS (V) = -30V ID = -8 A (VGS = -10V) RDS(ON) < 32m (VGS = -10V) RDS(ON) < 55m (VGS = -4.5V)
SOIC-8 Top View S S S G D D D D
D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation
A
Maximum -30 ±20 -8 -6.6 -40 3 2.1 -55 to 150
Units V V A
TA=25°C TA=70°C ID IDM PD TJ, TSTG
TA=70°C
W °C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 24 54 21
Max 40 75 30
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AO4411
Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250 A, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250 A VGS=-10V, VDS=-5V VGS=-10V, I D=-8A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, I D=-5A Forward Transconductance VDS=-5V, ID=-8A ……
