器件名称: AO4438
功能描述: N-Channel Enhancement Mode Field Effect Transistor
文件大小: 118.33KB 共4页
简 介:AO4438 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4438 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4438 is Pb-free (meets ROHS & Sony 259 specifications). AO4438L is a Green Product ordering option. AO4438 and AO4438L are electrically identical.
Features
VDS (V) = 60V ID = 8.2A (VGS = 10V) RDS(ON) < 22m (VGS = 10V) RDS(ON) < 27m (VGS = 4.5V)
D S S S G D D D D
G S
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C TA=25°C TA=70°C ID IDM PD TJ, TSTG
Maximum 60 ±20 8.2 6.6 40 3.1 2 -55 to 150
Units V V A
W °C
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 24 54 21
Max 40 75 30
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AO4438
N Channel Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=48V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=8.2A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=7.6A Forward Transconductance VDS=5V, ID=8.2A IS=1A,VGS=0V Diode Forward Vo……
