器件名称: AO4464L
功能描述: N-Channel Enhancement Mode Field Effect Transistor
文件大小: 167.94KB 共4页
简 介:AO4464 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4464 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Standard Product AO4464 is Pb-free (meets ROHS & Sony 259 specifications). AO4464L is a Green Product ordering option. AO4464 and AO4464L are electrically identical.
Features
VDS (V) = 30V ID = 8.5A (VGS = 10V) RDS(ON) < 26m (VGS = 10V) RDS(ON) < 40m (VGS = 4.5V)
D S S S G D D D D G
SOIC-8
S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation
B
Maximum 30 ±20 8.5 7.1 50 3 2.1 -55 to 150
Units V V A
TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG
W °C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 31 59 16
Max 40 75 24
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AO4464
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=8.5A RDS(ON) gFS VSD IS Stat……
