器件名称: AO4470
功能描述: N-Channel Enhancement Mode Field Effect Transistor
文件大小: 125.75KB 共4页
简 介:AO4470 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4470 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. Standard product AO4470 is Pb-free (meets ROHS & Sony 259 specifications). AO4470L is a Green Product ordering option. AO4470 and AO4470L are electrically identical.
Features
VDS (V) = 30V ID = 18A RDS(ON) < 5.5m RDS(ON) < 6.2m (V GS = 10V) (VGS = 10V) (VGS = 4.5V)
D S S S G D D D D
G S
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation
B
Maximum 30 ±12 18 15 80 3 2.1 -55 to 150
Units V V A
TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG
W °C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 31 59 16
Max 40 75 24
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AO4470
Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage O……
