器件名称: AO4480
功能描述: N-Channel Enhancement Mode Field Effect Transistor
文件大小: 141.23KB 共4页
简 介:AO4480 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4480 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD Protected. This device is suitable for use as a low side switch in SMPS and general purpose applications. Standard Product AO4480 is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = 40V ID = 14A (VGS = 10V) RDS(ON) < 11.5m (VGS = 10V) RDS(ON) < 15.5m (VGS = 4.5V) ESD Rating: 4KV HBM UIS Tested Rg,Ciss,Coss,Crss Tested
D S S S G D D D D
G
SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current AF Pulsed Drain Current B TA=25°C Power Dissipation B Avalanche Current TA=70°C
B
S
Maximum 40 ±20 14 11 70 3.1 2.0 30 135 -55 to 150
Units V V A
TA=25°C TA=70°C IDSM IDM PD IAR EAR TJ, TSTG
W A mJ °C
Repetitive avalanche energy 0.3mH
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Lead
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 30 59 16
Max 40 75 24
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4480
Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Th……
