器件名称: AO4622
功能描述: Complementary Enhancement Mode Field Effect Transistor
文件大小: 189.19KB 共7页
简 介:AO4622 Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4622 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard product AO4622 is Pb-free (meets ROHS & Sony 259 specifications).
Features
n-channel VDS (V) = 20V ID = 7.3A (VGS=4.5V) RDS(ON) < 23m (VGS=10V) < 30m (VGS=4.5V) < 84m (VGS=2.5V) p-channel -20V -5A (VGS=-4.5V) RDS(ON) < 53m (VGS = -4.5V) < 87m (VGS = -2.5V)
D1 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 G1 G2 S1
D2
SOIC-8
S2
n-channel
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 20 VGS Gate-Source Voltage ±16 Continuous Drain AF Current Pulsed Drain Current B Power Dissipation B Avalanche Current TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD IAR EAR TJ, TSTG 7.3 6.2 35 2 1.44 13 25 -55 to 150
Max p-channel -20 ±12 -5 -4.2 -25 2 1.44 13 25 -55 to 150
Units V V A
W A mJ °C
Repetitive avalanche energy 0.3mH B Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel Parameter A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C
Symbol RθJA RθJL RθJA RθJL
Device n-ch n-ch n-ch p-……
